Gate leakage reduction in AlGaN/GaN HEMTs using in situi on treatment
Gate_leakage_reduction_in_AlGaNGaN_HEMTs_using_in_下载
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Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier
Nonlinear_Capacitance_Compensation_Method_for_Inte下载
Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors
Threshold Voltage Improvement and Leakage Reduction of AlGaN:GaN HEMTs Using Dual- Layer SiNx Stressors下载
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation
Reduced_surface_leakage_current_and_trapping_effec下载
Development of GaN HEMTs Fabricated on Silicon,Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration
Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration下载
GaN-HEMT Dynamic ON-state Resistance characterisation and Modelling
GaN-HEMT Dynamic ON-state Resistance characterisation and Modelling下载
Impacts of Backside Insulation on the Dynamic On- Resistance of Lateral p-GaN HEMTs-on-Si
Impacts of Backside Insulation on the Dynamic On- Resistance of Lateral p-GaN HEMTs-on-Si下载
An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices
An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices下载
Mechanism Analysis of DynamicOn-State Resistance Degradationfor a Commercial GaN HEMTUsing Double Pulse Test
Mechanism Analysis of Dynamic下载