Gate leakage reduction in AlGaN/GaN HEMTs using in situi on treatment

Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

Development of GaN HEMTs Fabricated on Silicon,Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Impacts of Backside Insulation on the Dynamic On- Resistance of Lateral p-GaN HEMTs-on-Si