2025-08-05 / 芯片半导体 / 6 浏览 Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation Reduced_surface_leakage_current_and_trapping_effec下载 0 This post has no comment yet 发表回复 取消回复您的邮箱地址不会被公开。 必填项已用 * 标注评论 * 显示名称 * 邮箱 * 网站 在此浏览器中保存我的显示名称、邮箱地址和网站地址，以便下次评论时使用。 上一篇 Development of GaN HEMTs Fabricated on Silicon,Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration 下一篇 Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors
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